PHOTOLUMINESCENCE AND P-TYPE CONDUCTIVITY IN CDTE-N GROWN BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

DHESE, KA ^{[1
]}

DEVINE, P ^{[1
]}

ASHENFORD, DE ^{[1
]}

NICHOLLS, JE ^{[1
]}

SCOTT, CG ^{[1
]}

SANDS, D ^{[1
]}

LUNN, B ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2X10(17) cm(-3) have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.

引用

页码：5423 / 5428

页数：6

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