IMPURITY EFFECTS IN SILICON FOR HIGH-EFFICIENCY SOLAR-CELLS

被引：114

作者：

HOPKINS, RH

ROHATGI, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90226-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：67 / 79

页数：13

共 19 条

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[10] DESIGN, FABRICATION, AND ANALYSIS OF 17-18-PERCENT EFFICIENT SURFACE-PASSIVATED SILICON SOLAR-CELLS [J].

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