PHOTOINDUCED FIXED OXIDE CHARGE MODIFICATION IN SIO2-FILMS

[1] Devine R. A. B., 1984, Induced Defects in Insulators, P249

[2] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257

[5] E' CENTER IN GLASSY SIO2 - O-17, H-1, AND VERY WEAK SI-29 SUPERHYPERFINE STRUCTURE [J]. PHYSICAL REVIEW B, 1980, 22 (09): : 4192 - 4202

[6] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[7] NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P492

[8] THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3780 - 3795

[9] PHOTOINDUCED PARAMAGNETIC DEFECTS IN AMORPHOUS-SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7079 - 7081

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO, P362

[1] Devine R. A. B., 1984, Induced Defects in Insulators, P249

[2] MECHANISMS OF DAMAGE RECOVERY IN ION-IMPLANTED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 563 - 565

[3] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257

[5] E' CENTER IN GLASSY SIO2 - O-17, H-1, AND VERY WEAK SI-29 SUPERHYPERFINE STRUCTURE [J]. PHYSICAL REVIEW B, 1980, 22 (09): : 4192 - 4202

[6] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[7] NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P492

[8] THEORY OF DEFECTS IN VITREOUS SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3780 - 3795

[9] PHOTOINDUCED PARAMAGNETIC DEFECTS IN AMORPHOUS-SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7079 - 7081

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO, P362