COMPENSATION IN HEAVILY DOPED N-TYPE INP AND GAAS

被引：64

作者：

ANDERSON, DA ^{[1
]}

APSLEY, N ^{[1
]}

DAVIES, P ^{[1
]}

GILES, PL ^{[1
]}

机构：

[1] PLESSEY RES CASWELL LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.335831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3059 / 3067

页数：9

相关论文

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