GENERATION OF INTERFACE STATES BY INJECTION OF ELECTRONS INTO SIO2

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LYON, SA
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O59 [应用物理学];
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页码:8 / 19
页数:12
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[1]   EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS [J].
ARNOLD, E ;
ABOWITZ, G .
APPLIED PHYSICS LETTERS, 1966, 9 (09) :344-&
[2]  
BALK P, 1965, SPR M EL SOC SAN FRA
[3]   SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].
BROWER, KL .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113
[4]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[5]   ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].
CAPLAN, PJ ;
POINDEXTER, EH ;
DEAL, BE ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854
[6]  
CHANG CC, 1976, THESIS PRINCETON U
[7]  
CHANG SJ, UNPUB
[8]  
CLEMENT JJ, 1977, THESIS PRINCTON U
[9]   SURFACE RECOMBINATION IN SEMICONDUCTORS [J].
FITZGERALD, DJ ;
GROVE, AS .
SURFACE SCIENCE, 1968, 9 (02) :347-+
[10]   EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J].
GDULA, RA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :42-47