EFFECT OF HYDROSTATIC-PRESSURE ON DIRECT ABSORPTION-EDGE OF GERMANIUM

被引:52
作者
WELBER, B
CARDONA, M
TSAY, YF
BENDOW, B
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] RADC,DIV SOLID STATE SCI,HANSCOM AFB,MA 01731
来源
PHYSICAL REVIEW B | 1977年 / 15卷 / 02期
关键词
D O I
10.1103/PhysRevB.15.875
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:875 / 879
页数:5
相关论文
共 24 条
[21]   PRESSURE-DEPENDENCE OF ENERGY GAPS AND REFRACTIVE-INDEXES OF TETRAHEDRALLY BONDED SEMICONDUCTORS [J].
TSAY, YF ;
MITRA, SS ;
BENDOW, B .
PHYSICAL REVIEW B, 1974, 10 (04) :1476-1481
[22]  
TSAY YF, TO BE PUBLISHED
[23]   RAMAN-SCATTERING AND PHONON DISPERSION IN SI AND GAP AT VERY HIGH-PRESSURE [J].
WEINSTEIN, BA ;
PIERMARINI, GJ .
PHYSICAL REVIEW B, 1975, 12 (04) :1172-1186
[24]   DEPENDENCE OF DIRECT ENERGY-GAP OF GAAS ON HYDROSTATIC-PRESSURE [J].
WELBER, B ;
CARDONA, M ;
KIM, CK ;
RODRIGUEZ, S .
PHYSICAL REVIEW B, 1975, 12 (12) :5729-5738