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- [24] HIGH DOSE EFFECTS IN ION-IMPLANTATION RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 69 - 71
- [25] ON THE MECHANISM OF SILICON AMORPHIZATION BY ION-IMPLANTATION CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 13 (3-4): : 305 - 313
- [27] A COMPARISON OF BATCH AND SINGLE WAFER HIGH-DOSE ARSENIC ION-IMPLANTATION TECHNIQUES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 547 - 549
- [29] AN INVESTIGATION OF PHASE-FORMATION BY HIGH-DOSE SILICON ION-IMPLANTATION INTO NICKEL NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 352 - 356
- [30] REFLECTANCE OF SILICON SURFACES AFTER HIGH-DOSE RATE MOLECULAR ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 595 - 600