ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E)

被引：28
作者：
DAVEY, JE
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 07期
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D O I：
10.1063/1.1754536
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：164 / &
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