ON THE DIFFUSION PROFILE OF BORON IN SILICON AT HIGH-CONCENTRATIONS

被引：0
|
作者：
GAISEANU, F
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K59 / K61
页数：3
相关论文
共 50 条
  • [31] MEASUREMENT OF HIGH BORON CONCENTRATIONS IN SILICON BY INFRARED-SPECTROSCOPY
    SOPORI, BL
    APPLIED PHYSICS LETTERS, 1985, 47 (01) : 39 - 41
  • [32] THE DIFFUSION OF PHOSPHORUS IN SILICON FROM HIGH SURFACE CONCENTRATIONS
    SCHAAKE, HF
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1208 - 1211
  • [33] SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon
    Gautier, B
    Dupuy, JC
    Semmache, B
    Prudon, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 142 (03): : 361 - 376
  • [34] SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon
    UMR Cent Natl de la Recherche, Scientifique, Villeurbanne, France
    Nucl Instrum Methods Phys Res Sect B, 3 (361-376):
  • [35] BORON DIFFUSION INTO SILICON USING ELEMENTAL BORON
    OKAMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (12) : 1440 - &
  • [36] PHYSIOLOGICAL AND GENETIC-CONTROL OF THE TOLERANCE OF WHEAT TO HIGH-CONCENTRATIONS OF BORON AND IMPLICATIONS FOR PLANT-BREEDING
    PAULL, JG
    NABLE, RO
    RATHJEN, AJ
    PLANT AND SOIL, 1992, 146 (1-2) : 251 - 260
  • [37] BORON-DIFFUSION IN SILICON
    MARCHIANDO, JF
    ROITMAN, P
    ALBERS, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2322 - 2330
  • [38] DIFFUSION MECHANISM OF BORON IN SILICON
    PANTELEEV, VA
    OKULICH, VI
    VASIN, AS
    GUSAROV, VA
    INORGANIC MATERIALS, 1985, 21 (08) : 1101 - 1103
  • [39] DIFFUSION OF BORON IMPLANTED INTO SILICON
    STELMAKH, VF
    SUPRUNBELEVICH, YR
    TKACHEV, VD
    CHELYADINSKII, AR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (01): : K45 - K49
  • [40] Diffusion of boron in silicon carbide
    Rüschenschmidt, K
    Bracht, H
    Laube, M
    Stolwijk, NA
    Pensl, G
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 734 - 737
12345