TURNOVER PHENOMENON OF N+N N+ PLATE CONTACT SILICON DEVICE AND 2ND BREAKDOWN IN TRANSISTORS

被引：13

作者：

AGATSUMA, T

KOHISA, T

SUGIYAMA, A

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 01期

关键词：

D O I：

10.1109/PROC.1965.3545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / +

页数：1

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MITCHELL, WH .

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[7]

Schafft H., 1962, IRE T ELECTRON DEV, V9, P129

[8]

THORNTON CG, 1958, IRE T ELECTRON DEV, VED5, P6

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