CRITICAL DOMAIN SIZE OF THE 7X7-STRUCTURE FOR NUCLEATION AND GROWTH ON SI(111) QUENCHED SURFACES

被引：47

作者：

HOSHINO, T ^{[1
]}

KOKUBUN, K ^{[1
]}

FUJIWARA, H ^{[1
]}

KUMAMOTO, K ^{[1
]}

ISHIMARU, T ^{[1
]}

OHDOMARI, I ^{[1
]}

机构：

[1] WASEDA UNIV,KAGAMI MEM LAB MAT SCI & TECHNOL,SHINJUKU KU,TOKYO 169,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.75.2372

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In situ scanning tunneling microscopy observations of Si(111) quenched surfaces at 550-700 degrees C have revealed that isolated 7 X 7 domains nucleate or annihilate with a single SF triangle as a building unit and that there exists a critical nucleus size for 7 x 7 domain growth. This critical size has a temperature dependence which has been theoretically discussed using the two-dimensional nucleation and growth theory.

引用

页码：2372 / 2375

页数：4

共 23 条

[1] REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE
BECKER, RS
GOLOVCHENKO, JA
HAMANN, DR
SWARTZENTRUBER, BS
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2032 - 2034
[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE
BINNIG, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123
[3] ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION
BROMMER, KD
NEEDELS, M
LARSON, BE
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1992, 68 (09) : 1355 - 1358
[4] HOSHINO M, IN PRESS
[5] EVIDENCE FOR THE LEADING ROLE OF THE STACKING-FAULT TRIANGLE IN THE SI(111)1X-1-]7X7 PHASE-TRANSITION
HOSHINO, T
KUMAMOTO, K
KOKUBUN, K
ISHIMARU, T
OHDOMARI, I
[J]. PHYSICAL REVIEW B, 1995, 51 (20): : 14594 - 14597
[6] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &
[7] LANDER JJ, 1964, SURF SCI, V1, pL25
[8] AN HYPOTHESIS ON THE ROLE OF OXYGEN IN THE SI(111)-1 X-1 -] 7 X 7 PHASE-TRANSITION
OHDOMARI, I
[J]. SURFACE SCIENCE, 1992, 271 (1-2) : 170 - 178
[9] OHRING M, 1962, MATERIAL SCI THIN FI, P41
[10] REFLECTION ELECTRON-MICROSCOPE OBSERVATIONS OF DISLOCATIONS AND SURFACE-STRUCTURE PHASE-TRANSITION ON CLEAN (111) SILICON SURFACES
OSAKABE, N
YAGI, K
HONJO, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L309 - L312

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