MODELING THE IV CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS

被引：29

作者：

HSIAO, TC

KISTLER, NA

WOO, JCS

机构：

[1] The Department of Electrical Engineering, 56-125B Engineering IV, University of California

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 02期

关键词：

D O I：

10.1109/55.285378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 mum.

引用

页码：45 / 47

页数：3

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