TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA

被引：30

作者：

HAN, CJ

MOSLEHI, MM

HELMS, CR

SARASWAT, KC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：641 / 643

页数：3

共 16 条

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[2]

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[5]

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[9] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].

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[10] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

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