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THE EFFECT OF SOURCE FEEDBACK ON GAAS-MESFET CIRCUIT MODELS
被引:0
作者
:
KROWNE, CM
论文数:
0
引用数:
0
h-index:
0
KROWNE, CM
机构
:
来源
:
INTERNATIONAL JOURNAL OF ELECTRONICS
|
1984年
/ 57卷
/ 04期
关键词
:
D O I
:
10.1080/00207218408938926
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:447 / 459
页数:13
相关论文
共 6 条
[1]
MICROWAVE FIELD-EFFECT TRANSISTORS 1976
[J].
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
LIECHTI, CA
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:279
-330
[2]
PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES
[J].
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
;
LARRICK, RB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LARRICK, RB
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:376
-381
[3]
SIMPLIFIED GAAS MESFET MODEL TO 10 GHZ
[J].
MINASIAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MELBOURNE,DEPT ELECT ENGN,PARKVILLE 3052,VICTORIA,AUSTRALIA
UNIV MELBOURNE,DEPT ELECT ENGN,PARKVILLE 3052,VICTORIA,AUSTRALIA
MINASIAN, RA
.
ELECTRONICS LETTERS,
1977,
13
(18)
:549
-551
[4]
NEIDERT RE, 1982, 8561 NAV RES LAB REP
[5]
HIGH-SPEED MICROELECTRONICS FOR MILITARY APPLICATIONS
[J].
PECKERAR, MC
论文数:
0
引用数:
0
h-index:
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机构:
UNIV MARYLAND, BALTIMORE, MD 21201 USA
UNIV MARYLAND, BALTIMORE, MD 21201 USA
PECKERAR, MC
;
NEIDERT, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARYLAND, BALTIMORE, MD 21201 USA
UNIV MARYLAND, BALTIMORE, MD 21201 USA
NEIDERT, RE
.
PROCEEDINGS OF THE IEEE,
1983,
71
(05)
:657
-666
[6]
GAAS MICROWAVE DEVICES AND CIRCUITS WITH SUB-MICRON ELECTRON-BEAM DEFINED FEATURES
[J].
WISSEMAN, WR
论文数:
0
引用数:
0
h-index:
0
WISSEMAN, WR
;
MACKSEY, HM
论文数:
0
引用数:
0
h-index:
0
MACKSEY, HM
;
BREHM, GE
论文数:
0
引用数:
0
h-index:
0
BREHM, GE
;
SAUNIER, P
论文数:
0
引用数:
0
h-index:
0
SAUNIER, P
.
PROCEEDINGS OF THE IEEE,
1983,
71
(05)
:667
-675
←
1
→
共 6 条
[1]
MICROWAVE FIELD-EFFECT TRANSISTORS 1976
[J].
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
LIECHTI, CA
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:279
-330
[2]
PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES
[J].
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
;
LARRICK, RB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LARRICK, RB
.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1976,
24
(06)
:376
-381
[3]
SIMPLIFIED GAAS MESFET MODEL TO 10 GHZ
[J].
MINASIAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MELBOURNE,DEPT ELECT ENGN,PARKVILLE 3052,VICTORIA,AUSTRALIA
UNIV MELBOURNE,DEPT ELECT ENGN,PARKVILLE 3052,VICTORIA,AUSTRALIA
MINASIAN, RA
.
ELECTRONICS LETTERS,
1977,
13
(18)
:549
-551
[4]
NEIDERT RE, 1982, 8561 NAV RES LAB REP
[5]
HIGH-SPEED MICROELECTRONICS FOR MILITARY APPLICATIONS
[J].
PECKERAR, MC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARYLAND, BALTIMORE, MD 21201 USA
UNIV MARYLAND, BALTIMORE, MD 21201 USA
PECKERAR, MC
;
NEIDERT, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MARYLAND, BALTIMORE, MD 21201 USA
UNIV MARYLAND, BALTIMORE, MD 21201 USA
NEIDERT, RE
.
PROCEEDINGS OF THE IEEE,
1983,
71
(05)
:657
-666
[6]
GAAS MICROWAVE DEVICES AND CIRCUITS WITH SUB-MICRON ELECTRON-BEAM DEFINED FEATURES
[J].
WISSEMAN, WR
论文数:
0
引用数:
0
h-index:
0
WISSEMAN, WR
;
MACKSEY, HM
论文数:
0
引用数:
0
h-index:
0
MACKSEY, HM
;
BREHM, GE
论文数:
0
引用数:
0
h-index:
0
BREHM, GE
;
SAUNIER, P
论文数:
0
引用数:
0
h-index:
0
SAUNIER, P
.
PROCEEDINGS OF THE IEEE,
1983,
71
(05)
:667
-675
←
1
→