THE EFFECT OF SOURCE FEEDBACK ON GAAS-MESFET CIRCUIT MODELS

被引:0
作者
KROWNE, CM
机构
关键词
D O I
10.1080/00207218408938926
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:447 / 459
页数:13
相关论文
共 6 条
[1]   MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].
LIECHTI, CA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330
[2]   PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J].
LIECHTI, CA ;
LARRICK, RB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :376-381
[3]   SIMPLIFIED GAAS MESFET MODEL TO 10 GHZ [J].
MINASIAN, RA .
ELECTRONICS LETTERS, 1977, 13 (18) :549-551
[4]  
NEIDERT RE, 1982, 8561 NAV RES LAB REP
[5]   HIGH-SPEED MICROELECTRONICS FOR MILITARY APPLICATIONS [J].
PECKERAR, MC ;
NEIDERT, RE .
PROCEEDINGS OF THE IEEE, 1983, 71 (05) :657-666
[6]   GAAS MICROWAVE DEVICES AND CIRCUITS WITH SUB-MICRON ELECTRON-BEAM DEFINED FEATURES [J].
WISSEMAN, WR ;
MACKSEY, HM ;
BREHM, GE ;
SAUNIER, P .
PROCEEDINGS OF THE IEEE, 1983, 71 (05) :667-675