REACTIVE ION-BEAM ETCHING USING A SELECTIVE GALLIUM DOPING METHOD

被引：2
作者：
NISHIOKA, K
MORIMOTO, H
MASHIKO, Y
KATO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 09期
关键词：
D O I：
10.1143/JJAP.28.L1671
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1671 / L1672
页数：2
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