HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES

被引：86

作者：

ASANO, T

ISHIWARA, H

KAIFU, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.1474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1474 / 1481

页数：8

共 12 条

[1] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J].

ASANO, T ;

ISHIWARA, H .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :517-519

[2] EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES [J].

ASANO, T ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (10) :L630-L632

[3] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J].

ASANO, T ;

ISHIWARA, H .

THIN SOLID FILMS, 1982, 93 (1-2) :143-150

[4] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ASANO, T ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :187-191

[5]

CHERNEVS.EG, 1966, FIZ TVERD TELA+, V8, P169

[6] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].

FARROW, RFC ;

SULLIVAN, PW ;

WILLIAMS, GM ;

JONES, GR ;

CAMERON, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420

[7] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J].

GEIS, MW ;

FLANDERS, DC ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :71-74

[8] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J].

GIBSON, JM ;

BEAN, JC ;

POATE, JM ;

TUNG, RT .

THIN SOLID FILMS, 1982, 93 (1-2) :99-108

[9] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[10]

ISHIWARA H, 1983, JPN J APPL PHYS S1, V22, P201

← 1 2 →