AN ALTERNATIVE APPROACH TO EXCITON BINDING-ENERGY IN A GAAS-ALXGAL-X AS QUANTUM

被引:68
作者
JIANG, TF [1 ]
机构
[1] NATL TSINGHUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
关键词
D O I
10.1016/0038-1098(84)90135-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:589 / 593
页数:5
相关论文
共 18 条
[1]   EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1982, 26 (04) :1974-1979
[2]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[3]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[4]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[5]  
DINGLE R, 1976, 13TH P INT C PHYS SE
[6]   ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD ;
HOLONYAK, N ;
REZEK, EA ;
CHIN, R .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297
[7]   BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1983, 45 (09) :831-835
[8]   BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
REZEK, EA ;
CHIN, R ;
DUPUIS, RD ;
DAPKUS, PD .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5392-5397
[9]   ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS [J].
KROEMER, H ;
ZHU, QG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :551-553
[10]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&