WIDE-RANGE CONTROL OF CRYSTALLITE SIZE AND ITS ORIENTATION IN GLOW-DISCHARGE DEPOSITED MU-C-SI-H

被引：44
作者：
MATSUDA, A
KUMAGAI, K
TANAKA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 01期
关键词：
D O I：
10.1143/JJAP.22.L34
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L34 / L36
页数：3
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  • [1] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
    HAMASAKI, T
    KURATA, H
    HIROSE, M
    OSAKA, Y
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086
  • [2] A PHOTO-LUMINESCENCE STUDY OF AMORPHOUS-MICROCRYSTALLINE MIXED-PHASE SI-H FILMS
    HATA, N
    YAMASAKI, S
    OHEDA, H
    MATSUDA, A
    OKUSHI, H
    TANAKA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L793 - L796
  • [3] SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE
    HIRAKI, A
    IMURA, T
    MOGI, K
    TASHIRO, M
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 277 - 280
  • [4] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS
    MATSUDA, A
    MATSUMURA, M
    YAMASAKI, S
    YAMAMOTO, H
    IMURA, T
    OKUSHI, H
    IIZIMA, S
    TANAKA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186
  • [5] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
    MATSUDA, A
    YAMASAKI, S
    NAKAGAWA, K
    OKUSHI, H
    TANAKA, K
    IIZIMA, S
    MATSUMURA, M
    YAMAMOTO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308
  • [6] PLASMA SPECTROSCOPY - CONTROL AND ANALYSIS OF A-SI-H DEPOSITION
    MATSUDA, A
    NAKAGAWA, K
    TANAKA, K
    MATSUMURA, M
    YAMASAKI, S
    OKUSHI, H
    IIZIMA, S
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 183 - 188
  • [7] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
    MATSUDA, A
    TANAKA, K
    [J]. THIN SOLID FILMS, 1982, 92 (1-2) : 171 - 187
  • [8] ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA
    SPEAR, WE
    WILLEKE, G
    LECOMBER, PG
    FITZGERALD, AG
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 257 - 260
  • [9] OPTICAL, ELECTRICAL AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON
    TANAKA, K
    NAKAGAWA, K
    MATSUDA, A
    MATSUMURA, M
    YAMAMOTO, H
    YAMASAKI, S
    OKUSHI, H
    IIZIMA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 267 - 273
  • [10] PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW-DISCHARGE SI-H FILMS
    UCHIDA, Y
    ICHIMURA, T
    UENO, M
    OHSAWA, M
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 265 - 268
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