AMORPHOUS-SILICON THIN-FILM TRANSISTORS - PERFORMANCE AND MATERIAL PROPERTIES

被引：0
作者：
POWELL, MJ
机构：
来源：
PROCEEDINGS OF THE SID | 1985年 / 26卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：191 / 196
页数：6
相关论文
共 50 条
[11]   ANALYSIS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
SHUR, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1291-1294
[12]   AMORPHOUS-SILICON SUPERLATTICE THIN-FILM TRANSISTORS [J].
TSUKUDE, M ;
HATA, S ;
KOHDA, Y ;
MIYAZAKI, S ;
HIROSE, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :317-320
[13]   DEFECT POOL IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
POWELL, MJ ;
VANBERKEL, C ;
FRANKLIN, AR ;
DEANE, SC ;
MILNE, WI .
PHYSICAL REVIEW B, 1992, 45 (08) :4160-4170
[14]   NUMERICAL SIMULATIONS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
SHAW, J .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) :5337-5342
[15]   THEORY OF VERTICAL AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
SHAW, JG ;
HACK, M .
AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :259-264
[16]   DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
GRAEFF, CFO ;
BRANDT, MS ;
STUTZMANN, M ;
POWELL, MJ .
PHYSICAL REVIEW B, 1995, 52 (07) :4680-4683
[17]   SIMULATIONS AND PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HACK, M ;
SHAW, JG ;
SHUR, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 115 (1-3) :150-155
[18]   METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
HEPBURN, AR ;
MARSHALL, JM ;
MAIN, C ;
POWELL, MJ ;
VANBERKEL, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2215-2218
[19]   CHARACTERIZATION OF INSTABILITY IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
KANEKO, Y ;
SASANO, A ;
TSUKADA, T .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7301-7305
[20]   IMPROVED MATERIAL PROPERTIES OF AMORPHOUS-SILICON FROM SILANE BY FLUORINE IMPLANTATION - APPLICATION TO THIN-FILM TRANSISTORS [J].
SCHROPP, REI .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) :3706-3711
12345