ALINAS/GAINAS ON INP HEMTS FOR LOW-POWER SUPPLY VOLTAGE OPERATION OF HIGH POWER-ADDED EFFICIENCY MICROWAVE-AMPLIFIERS

被引：1
|
作者：
LARSON, LE [1 ]
MATLOUBIAN, MM [1 ]
BROWN, JJ [1 ]
BROWN, AS [1 ]
RHODES, R [1 ]
CRAMPTON, D [1 ]
THOMPSON, M [1 ]
机构：
[1] HUGHES TELECOMMUN & SPACE CO,EL SEGUNDO,CA
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 15期
关键词：
HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS;
D O I：
10.1049/el:19930888
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High power-added efficiency microwave power amplifier results are reponed for AlInAs/GaInAs on InP HEMTs operated at relatively low power supply voltages (2.5-3V). C-band power amplifiers are reported with power-added efficiencies as high as 67%, and output powers between 200 and 300 mW. This excellent performance at low power supply voltages is attributed to the high gain and low access resistances of the devices, which leads to a high drain efficiency despite the low power supply voltage.
引用
收藏
页码：1324 / 1326
页数：3
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