LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS

被引：52

作者：

ENNEN, H

POMRENKE, G

AXMANN, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2182 / 2185

页数：4

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[4] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

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AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[5] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

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[6] DONOR-ACCEPTOR PAIRS IN GAP AND GAAS INVOLVING THE DEEP NICKEL ACCEPTOR [J].

ENNEN, H ;

KAUFMANN, U ;

SCHNEIDER, J .

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[8]

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[9]

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[10]

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