ON THE ROLE OF THE BACK CONTACT IN DLTS EXPERIMENTS WITH SCHOTTKY DIODES

被引：10
作者：
THURZO, I [1 ]
DUBECKY, F [1 ]
机构：
[1] SLOVAK ACAD SCI, INST ELECTROENGN, CS-80936 BRATISLAVA, CZECHOSLOVAKIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 89卷 / 02期
关键词：
D O I：
10.1002/pssa.2210890233
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：693 / 698
页数：6
相关论文
共 6 条
  • [1] TRANSIENT CAPACITANCE MEASUREMENTS ON RESISTIVE SAMPLES
    BRONIATOWSKI, A
    BLOSSE, A
    SRIVASTAVA, PC
    BOURGOIN, JC
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 2907 - 2910
  • [2] CONTACT RESISTANCE - AL AND AL-SI TO DIFFUSED N+ AND P+ SILICON
    FAITH, TJ
    IRVEN, RS
    PLANTE, SK
    ONEILL, JJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 443 - 448
  • [3] Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
  • [4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
    LANG, DV
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
  • [5] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
    MARTIN, GM
    MITONNEAU, A
    MIRCEA, A
    [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
  • [6] Rhoderick E H, 1980, METAL SEMICONDUCTOR
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