INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES

被引：51

作者：

BRUGGER, H

SCHAFFLER, F

ABSTREITER, G

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.52.141

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：141 / 144

页数：4

共 18 条

[1] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

[2] ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES [J].

MELE, EJ ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1978, 17 (04) :1816-1827

[3] LIGHT-SCATTERING STUDY OF ELECTRONS CONFINED AT GE/GAAS INTERFACES [J].

MERLIN, R ;

PINCZUK, A ;

BEARD, WT ;

WOOD, CEE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :516-518

[4]

Milnes AG, 1972, HETEROJUNCTIONS META

[5]

MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597

[6] THE ELECTRONIC-STRUCTURE OF GE-GAAS(110) INTERFACES [J].

MONCH, W ;

BAUER, RS ;

GANT, H ;

MURSCHALL, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :498-506

[7] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

MONCH, W ;

GANT, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515

[8] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS [J].

PICKETT, WE ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1978, 17 (02) :815-828

[9] RAMAN SCATTERING FROM INSB SURFACES AT PHOTON ENERGIES NEAR E1 ENERGY GAP [J].

PINCZUK, A ;

BURSTEIN, E .

PHYSICAL REVIEW LETTERS, 1968, 21 (15) :1073-&

[10] ELECTRONIC-STRUCTURE OF THE GE-GAAS AND GE-ZNSE (100) INTERFACES [J].

POLLMANN, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (02) :709-722

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