共 18 条
- [1] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956
- [2] ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES [J]. PHYSICAL REVIEW B, 1978, 17 (04) : 1816 - 1827
- [3] LIGHT-SCATTERING STUDY OF ELECTRONS CONFINED AT GE/GAAS INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 516 - 518
- [4] Milnes AG, 1972, HETEROJUNCTIONS META
- [5] MONCH W, 1980, J VAC SCI TECHNOL, V17, P1094, DOI 10.1116/1.570597
- [6] THE ELECTRONIC-STRUCTURE OF GE-GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 498 - 506
- [7] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (07) : 512 - 515
- [10] ELECTRONIC-STRUCTURE OF THE GE-GAAS AND GE-ZNSE (100) INTERFACES [J]. PHYSICAL REVIEW B, 1980, 21 (02): : 709 - 722