BULK NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICES

被引：22
作者：
COPELAND, JA
机构：
来源：
IEEE SPECTRUM | 1967年 / 4卷 / 05期
关键词：
D O I：
10.1109/MSPEC.1967.5215757
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：71 / &
相关论文
共 25 条
[11]  
GUNN JB, 1965, PLASMA EFFECTS SOLID, P199
[12]   GAAS POST-THRESHOLD MICROWAVE AMPLIFIER MIXER AND OSCILLATOR [J].
HAKKI, BW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02) :299-+
[13]   COHERENT HIGH FIELD OSCILLATIONS IN LONG SAMPLES OF GAAS [J].
HEEKS, JS ;
WOODE, AD ;
SANDBANK, CP .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05) :554-&
[14]   TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].
HILSUM, C .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&
[15]   MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].
HUTSON, AR ;
JAYARAMAN, AG ;
CHYNOWETH, AG ;
CORIELL, AS ;
FELDMAN, WL .
PHYSICAL REVIEW LETTERS, 1965, 14 (16) :639-+
[16]   HIGH POWER PULSED MICROWAVE GENERATION IN GALLIUM ARSENIDE [J].
KENNEDY, WK ;
EASTMAN, LF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :434-&
[17]   THEORY OF GUNN EFFECT [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1736-&
[18]  
LOWDIN PO, 1966, QUANTUM THEORY AT ED, P537
[19]  
MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4
[20]   POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].
RIDLEY, BK ;
WATKINS, TB .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&
123