DRY ETCHING OF POLYIMIDE IN O2-CF4 AND O2-SF6 PLASMAS

被引:0
|
作者
TURBAN, G [1 ]
RAPEAUX, M [1 ]
机构
[1] UNIV NANTES,PHYS CORPUSCULAIRE LAB,ERA 924,F-44072 NANTES,FRANCE
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C83 / C83
页数:1
相关论文
共 50 条
  • [41] Electron cyclotron resonance etching of SiC in SF6/O-2 and NF3/O-2 plasmas
    Ren, F
    Grow, JM
    Bhaskaran, M
    Lee, JW
    Vartuli, CB
    Lothian, JR
    Flemish, JR
    COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS, 1996, 421 : 251 - 255
  • [42] Dry etching characteristics of Pb(ZrTi)O3 films in CF4 and Cl2/CF4 inductively coupled plasmas
    Jung, JK
    Lee, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A): : 1408 - 1419
  • [43] YELLOW EMISSION BANDS PRODUCED DURING GOLD ETCHING IN O2-CF4 RF GLOW-DISCHARGE PLASMAS - EVIDENCE FOR GAS-PHASE AUF
    SAENGER, KL
    SUN, CP
    PHYSICAL REVIEW A, 1992, 46 (01): : 670 - 673
  • [44] Reactive ion etching of 6H-SiC in SF6/O-2 and CF4/O-2 with N-2 additive for device fabrication
    Wolf, R
    Helbig, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (03) : 1037 - 1042
  • [45] THE DEPENDENCE OF SILICON ETCHING ON AN APPLIED DC POTENTIAL IN CF4 + O2 PLASMAS
    KAWATA, H
    MURATA, K
    NAGAMI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 206 - 211
  • [46] Thermophysical properties of CF4/O2 and SF6/O2 gas mixtures
    Damyanova, M.
    Hohm, U.
    Balabanova, E.
    Barton, D.
    19TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES (VEIT2015), 2016, 700
  • [47] Effects of SF6 addition to O2 plasma on polyimide etching in ECR plasma etcher
    Kim, SH
    Moon, H
    Ahn, J
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 214 - 215
  • [48] Dry etching characteristics of Pb(Zr,Ti)O3 films in CF4 and Cl2/CF4 inductively coupled plasmas
    Jung, J.-K.
    Lee, W.-J.
    2001, Japan Society of Applied Physics (40): : 1408 - 1419
  • [49] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES
    DAGOSTINO, R
    CRAMAROSSA, F
    DEBENEDICTIS, S
    FERRARO, G
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265
  • [50] Dry etching characteristics of attenuated phase-shifting masks using Cl2/CF4/O2/He Plasmas
    Choi, SJ
    Cha, HS
    Yoon, SY
    Jung, SM
    Choi, SS
    Jeong, SH
    21ST ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2002, 4562 : 561 - 570