共 50 条
- [32] COMPARISON OF CF4-O2 AND CF2CL2-O2 PLASMAS USED FOR THE REACTIVE ION ETCHING OF SINGLE-CRYSTAL SILICON JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1412 - 1417
- [34] Thick benzocyclobutene etching using high density SF6/O2 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
- [35] Low temperature reactive ion etching of silicon with SF6/O-2 plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02): : 434 - 438
- [36] Low temperature reactive ion etching of silicon with SF6/O2 plasmas Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (02):
- [38] Low temperature reactive ion etching of silicon with SF6/O-2 plasmas IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 349 - 353
- [39] DIELECTRIC AND CHEMICAL MODIFICATIONS IN POLYIMIDE FILMS ETCHED IN O2/CF4 PLASMAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1337 - 1345