STRUCTURE OF PHOTOLUMINESCENCE SPECTRA OF MG-O IMPURITY COMPLEXES IN GALLIUM-PHOSPHIDE

被引：0

作者：

AITIKEEVA, TD ^{[1
]}

LAZAREVA, IK ^{[1
]}

YUNOVICH, AE ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1506 / 1507

页数：2

共 50 条

[41] THE EFFECT OF HEAT-TREATMENT AND COMPENSATING DEFECTS ON GALLIUM-PHOSPHIDE IR-ABSORPTION-SPECTRA
ZAGAINOVA, LI
KRAICHINSKY, AN
OSTASHKO, NI
SHAKHOVTSOV, VI
UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (04): : 668 - 671
[42] RELATION BETWEEN GROWTH-CONDITIONS AND DISLOCATION-STRUCTURE IN GALLIUM-PHOSPHIDE CRYSTALS
OKUNEV, YA
AKHINKO, AT
BUZYNIN, AN
SELIN, VV
BLETSKAN, NI
INORGANIC MATERIALS, 1979, 15 (07) : 905 - 907
[43] PHOTO-LUMINESCENCE STUDIES OF MG-DOPED LIQUID-PHASE EPITAXIAL GALLIUM-PHOSPHIDE
GOURLEY, PL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 457 - 457
[44] INFLUENCE OF INFRARED RADIATION ON PHOTOLUMINESCENCE OF GALLIUM-PHOSPHIDE GENERATED BY 2-STAGE ABSORPTION OF RED-LIGHT
GAIVORON, VG
ELINSON, MI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1269 - 1271
[45] INITIAL GROWTH AND DEFECT STRUCTURE OF GALLIUM-PHOSPHIDE LAYERS DEPOSITED ON (111)-ORIENTED GAAS SUBSTRATES
WAGNER, G
KUHN, G
JOURNAL OF MATERIALS SCIENCE LETTERS, 1982, 1 (02) : 45 - 48
[46] FINE-STRUCTURE OF THE ZERO-PHONON COMPONENT OF THE ABSORPTION-EDGE OF GALLIUM-PHOSPHIDE
LUPAL, MV
PIKHTIN, AN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 471 - 472
[47] ANALYSIS OF ROOM-TEMPERATURE LUMINESCENCE SPECTRA OF VPE-GROWN NITROGEN-DOPED GALLIUM-PHOSPHIDE
LINDQUIST, PF
LARSEN, TL
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) : 567 - 590
[48] Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy
Alawadhi, H
Vogelgesang, R
Ramdas, AK
Chin, TP
Woodall, JM
JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4331 - 4337
[49] PHOTOLUMINESCENCE OF HEAVILY DOPED GALLIUM-ARSENIDE WITH AN ORDERED DISTRIBUTION OF IMPURITY COMPLEXES
BOGDANOVA, VA
SEMIKOLENOVA, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05): : 460 - 462
[50] ANALYSIS OF ROOM-TEMPERATURE EMISSION-SPECTRA OF VPE-GROWN NITROGEN-DOPED GALLIUM-PHOSPHIDE
LINDQUIS.PF
LARSEN, TL
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 861 - 861

← 1 2 3 4 5 →