INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES

被引:58
作者
BAGLIN, JEE
DHEURLE, FM
PETERSSON, CS
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D O I
10.1063/1.332821
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O59 [应用物理学];
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页码:1849 / 1854
页数:6
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共 33 条
[1]   ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES [J].
BAGLIN, J ;
DHEURLE, F ;
PETERSSON, S .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :289-290
[2]   FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].
BAGLIN, J ;
DEMPSEY, J ;
HAMMER, W ;
DHEURLE, F ;
PETERSSON, S ;
SERRANO, C .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661
[3]   RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM [J].
BAGLIN, JEE ;
ATWATER, HA ;
GUPTA, D ;
DHEURLE, FM .
THIN SOLID FILMS, 1982, 93 (3-4) :255-264
[4]   INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH [J].
BAGLIN, JEE ;
DHEURLE, FM ;
HAMMER, WN ;
PETERSSON, S .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :491-497
[5]   THERMAL-OXIDATION OF NICKEL DISILICIDE [J].
BARTUR, M ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :175-177
[6]   OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J].
CHEN, JR ;
HOUNG, MP ;
HSIUNG, SK ;
LIU, YC .
APPLIED PHYSICS LETTERS, 1980, 37 (09) :824-826
[7]   INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].
CHEN, JR ;
LIU, YC ;
CHU, SD .
APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265
[8]  
CROS A, COMMUNICATION
[9]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[10]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&