COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS

被引：0
|
作者：
TSANG, JS [1 ]
LEE, CP [1 ]
FAN, JC [1 ]
TSAI, KL [1 ]
CHEN, HR [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 04期
关键词：
D O I：
10.1116/1.588183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of low-temperature (similar to 200 degrees C) grown GaAs by molecular beam epitaxy to induce compositional disordering of AlGaAs/GaAs superlattices has been studied. After furnace annealing between 700 and 850 degrees C for 30 min, an obvious blue shift in the peak wavelength of the superlattice emission is observed by the 77 K photoluminescence (PL), indicating that the emission has been changed from that of the GaAs quantum wells to that of the intermixed AlGaAs. The PL shift and the depth profile of Al concentration measured by secondary ion mass spectrometry indicate that the superlattice is nearly totally disordered after 850 degrees C annealing. (C) 1995 American Vacuum Society.
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页码：1536 / 1538
页数：3
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