SUBSURFACE GROWTH MODE OF COBALT AND NICKEL SILICIDES AT ROOM-TEMPERATURE

被引：0

作者：

LUO, L ^{[1
]}

SMITH, GA ^{[1
]}

HASHIMOTO, S ^{[1
]}

GIBSON, WM ^{[1
]}

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

SURFACE SCIENCE | 1991年 / 249卷 / 1-3期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ion channeling and Auger electron spectroscopy were used to investigate the initial growth of cobalt and nickel disilicide on boron stabilized Si(111)square-root 3 x square-root 3-B surfaces at room temperature. The results show that Co and Ni interact initially at subsurface sites and then the reaction proceeds toward the surface forming a barrier to further interaction.

引用

页码：L338 / L342

页数：5

共 24 条

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