THEORETICAL INVESTIGATION OF THE FERMI LEVEL PINNING AT THE SB-GAAS(110) INTERFACE

被引：7
|
作者：
MANGHI, F
CALANDRA, C
机构：
[1] Dipartimento di Fisica, Università di Modena, I-41100 Modena
来源：
VACUUM | 1990年 / 41卷 / 1-3期
关键词：
D O I：
10.1016/0042-207X(90)90453-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the results of theoretical calculations of the electronic structure of the Sb{single bond}GaAs(110) interface in the submonolayer coverages performed in the semiempirical tight-binding scheme. Interface states arising from the incomplete bonding of Sb atoms to the substrate appear in the band gap; such states can be present also at higher coverages when some disorder exists, evidentiating a general mechanism for Fermi level pinning at this interface. © 1990 Pergamon Press plc.
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页码：693 / 694
页数：2
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