THE DEVELOPMENT OF THE POSITRON-ANNIHILATION METHOD FOR THE STUDY OF PROPERTIES OF MONOCRYSTALLINE SILICON

被引：0
作者：
DEKHTYAR, IY
LIKHTOROVICH, SP
NISHCHENKO, MM
机构：
来源：
ZHURNAL TEKHNICHESKOI FIZIKI | 1984年 / 54卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：408 / 410
页数：3
相关论文
共 10 条
[1]  
AREFEV KP, 1977, FIZ TVERD TELA+, V19, P1339
[2]  
AREFEV KP, 1980, FTP, V14, P2384
[3]   INVESTIGATIONS OF ANOMALOUS PASSING OF POSITRONS THROUGH SI CRYSTALS [J].
CIZEK, A ;
DEKHTYAR, IY ;
MOSKALEVSKII, AI .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1979, 54 (01) :K71-K75
[4]   TEMPERATURE-DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIES [J].
DANNEFAER, S ;
KUPCA, S ;
HOGG, BG ;
KERR, DP .
PHYSICAL REVIEW B, 1980, 22 (12) :6135-6139
[5]  
DEKHTYAR IY, 1981, FIZ TVERD TELA+, V23, P2852
[6]  
DEKHTYAR IY, 1977, ZH EKSPER TEOR FIZ P, V26, P305
[7]  
DEKHTYAR IY, 1976, PISMA ZHETF, V23, P691
[8]  
Doyama M., 1973, Crystal Lattice Defects, V4, P139
[9]   ELECTRON MOMENTUM DISTRIBUTION IN SILICON AND GERMANIUM BY POSITRON ANNIHILATION [J].
ERSKINE, JC ;
MCGERVEY, JD .
PHYSICAL REVIEW, 1966, 151 (02) :615-&
[10]  
OWADA N, 1979, POSITRON ANNIHILATIO, P457
1