ABSORPTION AND EXPOSURE IN POSITIVE PHOTORESIST

被引：46

作者：

MACK, CA

机构：

来源：

APPLIED OPTICS | 1988年 / 27卷 / 23期

关键词：

D O I：

10.1364/AO.27.004913

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：4913 / 4919

页数：7

共 10 条

[1] INTENSITY DEPENDENCE OF PHOTOCHEMICAL REACTION-RATES FOR PHOTORESISTS [J].

ALBERS, J ;

NOVOTNY, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1400-1403

[2]

BACHUR G, 1976, P SOC PHOTOOPT INSTR, V80, P2

[3] CHARACTERIZATION OF POSITIVE PHOTORESIST [J].

DILL, FH ;

HORNBERGER, WP ;

HAUGE, PS ;

SHAW, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) :445-452

[4]

KOYLER JM, 1979, OCT P KOD MICR INT 7, P150

[5] ANALYTICAL EXPRESSION FOR THE STANDING WAVE INTENSITY IN PHOTORESIST [J].

MACK, CA .

APPLIED OPTICS, 1986, 25 (12) :1958-1961

[6]

MACK CA, 1985, P SOC PHOTO-OPT INST, V538, P207

[7]

MINVIELLE A, 1979, OCT P KOD MICR INT 7, P60

[8]

MOORE WJ, 1972, PHYSICAL CHEM, P753

[9] THERMAL-ANALYSIS OF POSITIVE PHOTORESIST FILMS BY MASS-SPECTROMETRY [J].

SHAW, JM ;

FRISCH, MA ;

DILL, FH .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :219-226

[10]

SKOOG DA, 1976, FUNDAMENTALS ANAL CH, P509

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