RESIDUAL DONOR IMPURITIES IN MO-CVD GALLIUM-ARSENIDE

被引：10
|
作者：
OHYAMA, T [1 ]
OTSUKA, E [1 ]
MATSUDA, O [1 ]
MORI, Y [1 ]
KANEKO, K [1 ]
机构：
[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA 240,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 09期
关键词：
D O I：
10.1143/JJAP.21.L583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L583 / L585
页数：3
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