RESIDUAL DONOR IMPURITIES IN MO-CVD GALLIUM-ARSENIDE

被引：10

作者：

OHYAMA, T ^{[1
]}

OTSUKA, E ^{[1
]}

MATSUDA, O ^{[1
]}

MORI, Y ^{[1
]}

KANEKO, K ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA 240,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.L583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L583 / L585

页数：3

共 50 条

[1] IDENTIFICATION OF RESIDUAL DONOR IMPURITIES IN GALLIUM-ARSENIDE
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[2] IONIZATION ENERGIES OF SUBSTITUTIONAL DONOR IMPURITIES IN GALLIUM-ARSENIDE
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[3] SEPARATION OF IMPURITIES IN GALLIUM-ARSENIDE
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[5] LUMINESCENCE OF TUNGSTEN IMPURITIES IN GALLIUM-ARSENIDE
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[7] MODEL OF RESIDUAL PHOTOCONDUCTIVITY - GALLIUM-ARSENIDE
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[9] SHALLOW DONOR LEVELS IN GALLIUM-ARSENIDE
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[10] RESIDUAL DONOR IMPURITIES IN VAPOR PHASE EPITAXIAL GALLIUM ARSENIDE.
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