ELECTRICAL CONDUCTIVITY IN HEAVILY DOPED N-TYPE GERMANIUM - TEMPERATURE AND STRESS DEPENDENCE

被引：57
作者：
KATZ, MJ
机构：
来源：
PHYSICAL REVIEW | 1965年 / 140卷 / 4A期
关键词：
D O I：
10.1103/PhysRev.140.A1323
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1323 / &
相关论文
共 63 条
[1]   Hall effect and conductivity of cuprous oxide [J].
Angello, SJ .
PHYSICAL REVIEW, 1942, 62 (7/8) :371-377
[2]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[3]  
CONWELL E, 1946, PHYS REV, V69, P258
[4]  
CSAVINSKY P, 1964, PHYS REV, V135, pAB3
[5]   EFFECT OF IMPURITY-CORE ON CARRIER MOBILITY IN HEAVILY DOPED GERMANIUM [J].
CSAVINSZKY, P .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) :1865-&
[6]   TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - COMBINATION OF VARIATIONAL AND PERTURBATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD [J].
CSAVINSZKY, P .
PHYSICAL REVIEW, 1963, 131 (05) :2033-&
[7]   TREATMENT OF IONIZED IMPURITY SCATTERING IN DEGENERATE SEMICONDUCTORS - APPLICATION OF VARIATIONAL TECHNIQUE IN PARTIAL-WAVE METHOD [J].
CSAVINSZKY, P .
PHYSICAL REVIEW, 1962, 126 (04) :1436-&
[8]   HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM [J].
CUEVAS, M ;
FRITZSCH.H .
PHYSICAL REVIEW, 1965, 139 (5A) :1628-&
[9]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706
[10]  
DINGLE RB, 1955, PHILOS MAG, V46, P831
1234567