SILICON ANISOTROPIC ETCHING IN KOH-ISOPROPANOL ETCHANT

被引：85
作者：
BARYCKA, I
ZUBEL, I
机构：
[1] Institute of Electron Technology, Technical University of Wrocaw, 53-370 Wrocaw
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 48卷 / 03期
关键词：
ANISOTROPIC ETCHING; POTASSIUM HYDROXIDE-ISOPROPANOL ETCHANT; SILICON;
D O I：
10.1016/0924-4247(95)00992-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon monocrystalline wafers of (100), (110) and (111) orientations are etched in KOH-isopropanol solution. SiO2 layers patterned with a few types of figures are used as a mask for the etching of holes or islands. The planes that disappear and develop during the etching process are pointed out. the shapes of the etched figures are compared with the crystallographic description of silicon structure.
引用
收藏
页码：229 / 238
页数：10
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