X-RAY-SCATTERING STUDY OF AG/SI(111) BURIED INTERFACE STRUCTURES

被引：53
作者：
HONG, HW
ABURANO, RD
LIN, DS
CHEN, HD
CHIANG, TC
ZSCHACK, P
SPECHT, ED
机构：
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[3] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.68.507
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7 x 7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250-degrees-C the interface becomes (1 x 1). This is contrasted by the (square-root 3 x square-root 3)R30-degrees structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (square-root 3 x square-root 3)R30-degrees Ag/Si(111) surface at room temperature, the (square-root 3 x square-root 3)R30-degrees reconstruction is suppressed.
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页码：507 / 510
页数：4
相关论文
共 15 条
[11]  
VENABLES JA, 1980, SURF SCI, V95, P441
[12]  
VILEG E, 1989, SURF SCI, V209, P100
[13]   OBSERVATION OF FILM STATES AND SURFACE-STATE PRECURSORS FOR AG FILMS ON SI(111) [J].
WACHS, AL ;
SHAPIRO, AP ;
HSIEH, TC ;
CHIANG, TC .
PHYSICAL REVIEW B, 1986, 33 (02) :1460-1463
[14]   EVIDENCE FOR GERMANIUM SEGREGATION ON THIN-FILMS OF AG ON GE(111) [J].
WACHS, AL ;
MILLER, T ;
CHIANG, TC .
PHYSICAL REVIEW B, 1986, 33 (12) :8870-8873
[15]   PHOTOEMISSION-STUDIES OF THE INITIAL ADSORPTION AND GROWTH OF AG ANDAU ON GE AND SI [J].
WACHS, AL ;
MILLER, T ;
SHAPIRO, AP ;
CHIANG, TC .
PHYSICAL REVIEW B, 1987, 35 (11) :5514-5523
12