X-RAY-SCATTERING STUDY OF AG/SI(111) BURIED INTERFACE STRUCTURES

被引：53
作者：
HONG, HW
ABURANO, RD
LIN, DS
CHEN, HD
CHIANG, TC
ZSCHACK, P
SPECHT, ED
机构：
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[3] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.68.507
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Various interface structures formed between Si(111) and a thick Ag overlayer are investigated by grazing-incidence x-ray diffraction. The (7 x 7) reconstruction of Si(111) is preserved under a room-temperature deposited Ag film. Upon annealing to 250-degrees-C the interface becomes (1 x 1). This is contrasted by the (square-root 3 x square-root 3)R30-degrees structure formed by annealing a thin Ag film on Si(111). By depositing a thick Ag film on this (square-root 3 x square-root 3)R30-degrees Ag/Si(111) surface at room temperature, the (square-root 3 x square-root 3)R30-degrees reconstruction is suppressed.
引用
收藏
页码：507 / 510
页数：4
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