A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES

被引：72
作者：
BOOKER, GR
JOYCE, BA
机构：
来源：
PHILOSOPHICAL MAGAZINE | 1966年 / 14卷 / 128期
关键词：
D O I：
10.1080/14786436608219013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：301 / &
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