MONOLITHIC INTEGRATION OF AN ALGAAS GAAS DH LED WITH A GAAS-FET DRIVER

被引:8
作者
WADA, O
SANADA, T
SAKURAI, T
机构
来源
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 10期
关键词
D O I
10.1109/EDL.1982.25578
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:305 / 307
页数:3
相关论文
共 7 条
[1]   FULL SOLID-STATE IMAGE CONVERTER BASED ON INTEGRATION OF PHOTOTRANSISTORS AND LEDS [J].
BENEKING, H .
ELECTRON DEVICE LETTERS, 1981, 2 (04) :99-100
[2]   MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].
FUKUZAWA, T ;
NAKAMURA, M ;
HIRAO, M ;
KURODA, T ;
UMEDA, J .
APPLIED PHYSICS LETTERS, 1980, 36 (03) :181-183
[3]   MONOLITHIC 1X4 ARRAY OF UNIFORM RADIANCE ALGAAS-GAAS LEDS GROWN BY MOLECULAR-BEAM EPITAXY [J].
SUGAHARA, T ;
WADA, O ;
FUJH, T ;
HIYAMIZU, S ;
SAKURAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L349-L350
[5]   LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT .
APPLIED PHYSICS LETTERS, 1979, 34 (07) :473-475
[6]   MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
URY, I ;
MARGALIT, S ;
YUST, M ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431
[7]   MONOLITHICALLY INTEGRATED OPTICAL REPEATER [J].
YUST, M ;
BARCHAIM, N ;
IZADPANAH, SH ;
MARGALIT, S ;
URY, I ;
WILT, D ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1979, 35 (10) :795-797