ANALYSIS OF GRAIN-BOUNDARIES BY HREM

被引：6
|
作者：
ELGAT, Z [1 ]
CARTER, CB [1 ]
机构：
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
来源：
ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期
关键词：
COMPUTER SIMULATION - CRYSTALS - Defects - IMAGE PROCESSING - MICROSCOPES; ELECTRON - SEMICONDUCTING GERMANIUM;
D O I：
10.1016/0304-3991(85)90149-4
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The analysis of grain boundaries by HRTEM has shown that there are importnat differences between the structure of these defects in ceramic materials and similar defects in semiconductors and metals. These differences are illustrated by a new analysis of such defects in Mg-Al spinel. The defects discussed include coherent and incoherent twins and the left brace 110 right brace stacking faults. Experimental results at the lower resolution of 0. 32 nm are compared with computer-simulated images for both the 125 kV and the new 400 kV transmission electron microscopes. The analysis of these defects in spinel is compared with both experimental and simulated images of closely related defects in germanium.
引用
收藏
页码：313 / 321
页数：9
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