NONALLOYED AND ALLOYED LOW-RESISTANCE OHMIC CONTACTS WITH GOOD MORPHOLOGY FOR GAAS USING A GRADED INGAAS CAP LAYER

被引：15

作者：

MEHDI, I

REDDY, UK

OH, J

EAST, JR

HADDAD, GI

机构：

来源：

关键词：

D O I：

10.1063/1.343080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：867 / 869

页数：3

共 6 条

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