NONALLOYED AND ALLOYED LOW-RESISTANCE OHMIC CONTACTS WITH GOOD MORPHOLOGY FOR GAAS USING A GRADED INGAAS CAP LAYER

被引：15
作者：
MEHDI, I
REDDY, UK
OH, J
EAST, JR
HADDAD, GI
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期
关键词：
D O I：
10.1063/1.343080
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：867 / 869
页数：3
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