TIME-OF-FLIGHT STUDIES OF COMPENSATED A-SI-H

被引：16

作者：

MARSHALL, JM

STREET, RA

THOMPSON, MJ

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(84)90317-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：175 / 180

页数：6

共 5 条

[1] HOLE CARRIER TRANSPORT IN AMORPHOUS SILICON FILMS
MARSHALL, JM
ALLAN, D
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (01): : 71 - 86
[2] LOCALIZED STATES IN COMPENSATED A-SI-H
MARSHALL, JM
STREET, RA
THOMPSON, MJ
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2331 - 2333
[3] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190
[4] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[5] EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
ZESCH, J
THOMPSON, MJ
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 672 - 674