PHASE-TRANSITIONS INDUCED BY A DEFECT IN A GROWING INTERFACE MODEL

被引:7
作者
KANDEL, D
GERSHINSKY, G
MUKAMEL, D
DERRIDA, B
机构
[1] WEIZMANN INST SCI,DEPT PHYS,IL-76100 REHOVOT,ISRAEL
[2] CEA SACLAY,SERV PHYS THEOR,F-91191 GIF SUR YVETTE,FRANCE
[3] ESPCI,PHYSICOCHIM THEOR GRP,F-75231 PARIS,FRANCE
来源
PHYSICA SCRIPTA | 1993年 / T49B卷
关键词
D O I
10.1088/0031-8949/1993/T49B/041
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effect of a localized defect on the profile of a one-dimensional growing interface is considered. The (q, q') phase diagram of a restricted solid-on-solid growth model is studied within the mean field approximation, where q' and q are the intrinsic growth rates of the defect site and of all other sites, respectively. It is found that the model exhibits two types of phase transitions: One separating vanishing slope and non-vanishing slope interfaces, and the other separating interfaces whose slope varies continuously with the defect parameter q' from those whose slope is independent of q'.
引用
收藏
页码:622 / 628
页数:7
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