PREPARATION OF C-AXIS-ORIENTED BI4TI3O-12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：95

作者：

NAKAMURA, T ^{[1
]}

MUHAMMET, R ^{[1
]}

SHIMIZU, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

FERROELECTRIC THIN FILMS; BISMUTH TITANATE; MOCVD; BUFFER LAYER; BI(C6H-5)3; D-E HYSTERESIS;

D O I：

10.1143/JJAP.32.4086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4Ti3O12 thin films were prepared on Pt/SiO2/Si(100), Pt/Ti/SiO2/Si(100) and sapphire (R-cut) by metalorganic chemical vapor deposition (MOCVD). Bi(C6H5)3 and Ti(i-OC3H7)4 were chosen as the metalorganic precursors. C-axis-oriented Bi4Ti3O12 thin films were grown on Pt/SiO2/Si (100) at 550-degrees-C. These films deposited directly on the substrates exhibit high loss and exhibit very rough surface morphology. However, a Bi4Ti3O12 film with a Bi2Ti2O7 buffer layer on Pt/SiO2/Si(100) exhibits very smooth morphology and are highly c-axis-oriented. This film shows remanent polarization of 0.6 muC/cm2, coercive field of 13 kV/cm and dielectric constant of 180.

引用

页码：4086 / 4088

页数：3

共 5 条

[1] RESEARCH STATUS AND DEVICE POTENTIAL OF FERROELECTRIC THIN-FILMS [J].