SUPPRESSION OF THE LATERAL DIFFUSION UNDER THE GATE OF AN MOS-TRANSISTOR BY ARGON IMPLANTATION

被引：6
作者：
MARCHETAUX, JC
DOYLE, BS
BOUDOU, A
MERENDA, P
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期
关键词：
D O I：
10.1109/T-ED.1985.22304
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2508 / 2510
页数：3
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