COMPARATIVE-STUDIES OF SI, GAAS, AND INP MILLIMETER-WAVE IMPATT DIODES

被引：4
作者：
LIPPENS, D
NIERUCHALSKI, JL
DALLE, C
ROLLAND, PA
机构：
来源：
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1986年 / 7卷 / 06期
关键词：
D O I：
10.1007/BF01013026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：771 / 783
页数：13
相关论文
共 12 条
[1]  
ADLERSTEIN MG, 1985, IEEE ELECTRON DEVICE, V5, P3
[2]  
BLAKEY PA, 1984, ELECTRONICS LETT, V21
[3]  
FANK FB, 1981, 8TH P CORN C MICR SE
[4]   EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GAAS DIODES [J].
GRONDIN, RO ;
BLAKEY, PA ;
EAST, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :21-28
[5]   A CARRIER TEMPERATURE MODEL SIMULATION OF A DOUBLE-DRIFT IMPATT DIODE [J].
KAFKA, HJ ;
HESS, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :831-834
[6]   SIMPLIFIED PARTICLE SIMULATION OF MILLIMETER-WAVE IMPATT DEVICES [J].
LIPPENS, D ;
NIERUCHALSKI, JL ;
CONSTANT, E .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2269-2276
[7]  
LIPPENS D, 1982, IEEE ELECTRON DEVICE, V3
[8]  
LIPPENS D, 1981, ELECTRON LETT, V17
[9]  
MA YE, 1984, ELECTRONICS LETT, V20, P5
[10]   SIMULATION OF GAAS IMPATT DIODES INCLUDING ENERGY AND VELOCITY TRANSPORT-EQUATIONS [J].
MAINS, RK ;
HADDAD, GI ;
BLAKEY, PA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1327-1338
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