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ANALYSIS AND SCALING OF KELVIN RESISTORS FOR EXTRACTION OF SPECIFIC CONTACT RESISTIVITY
被引:55
作者
:
LOH, WM
论文数:
0
引用数:
0
h-index:
0
LOH, WM
SARASWAT, K
论文数:
0
引用数:
0
h-index:
0
SARASWAT, K
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1985年
/ 6卷
/ 03期
关键词
:
D O I
:
10.1109/EDL.1985.26061
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:105 / 108
页数:4
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→
共 5 条
[1]
DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS
[J].
CHERN, JGJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
CHERN, JGJ
;
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
OLDHAM, WG
.
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(05)
:178
-180
[2]
GEOMETRICAL EFFECTS IN CONTACT RESISTANCE MEASUREMENTS - FINITE-ELEMENT MODELING AND EXPERIMENTAL RESULTS
[J].
NATAN, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
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NATAN, M
;
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论文数:
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h-index:
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
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PURUSHOTHAMAN, S
;
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论文数:
0
引用数:
0
h-index:
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机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DOBROWOLSKI, R
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(08)
:5776
-5782
[3]
PINTO MR, 1984, PISCES 2 POISSON CON
[4]
DIRECT MEASUREMENTS OF INTERFACIAL CONTACT RESISTANCE, END CONTACT RESISTANCE, AND INTERFACIAL CONTACT LAYER UNIFORMITY
[J].
PROCTOR, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
PROCTOR, SJ
;
LINHOLM, LW
论文数:
0
引用数:
0
h-index:
0
机构:
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
LINHOLM, LW
;
MAZER, JA
论文数:
0
引用数:
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h-index:
0
机构:
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
NBS, DIV SEMICOND DEVICES & CIRCUITS, WASHINGTON, DC USA
MAZER, JA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
:1535
-1542
[5]
A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS
[J].
SCOTT, DB
论文数:
0
引用数:
0
h-index:
0
SCOTT, DB
;
HUNTER, WR
论文数:
0
引用数:
0
h-index:
0
HUNTER, WR
;
SCHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
SCHICHIJO, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
:651
-661
←
1
→