NUMERICAL STUDY OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：9
作者：
BETON, PH [1 ]
LEVI, AFJ [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期
关键词：
D O I：
10.1063/1.101921
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：250 / 252
页数：3
相关论文
共 50 条
  • [11] FORWARD TRANSIT DELAY IN IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM ELECTRON-TRANSPORT
    LASKAR, J
    NOTTENBURG, RN
    LEVI, AFJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2122 - 2122
  • [12] NUMERICAL STUDY OF EMITTER-BASE JUNCTION DESIGN FOR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    DAS, A
    LUNDSTROM, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 863 - 870
  • [13] THERMAL EFFECTS AND INSTABILITIES IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    KARNER, M
    TEWS, H
    ZWICKNAGL, P
    SEITZER, D
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 165 - 170
  • [14] SURFACE RECOMBINATION CURRENT OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIOU, JJ
    YUAN, JS
    SOLID-STATE ELECTRONICS, 1992, 35 (06) : 805 - 813
  • [15] RADIATION HARDNESS CHARACTERISTICS OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    SONG, Y
    KIM, ME
    OKI, AK
    HAFIZI, ME
    CAMOU, JB
    KOBAYASHI, KW
    GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 155 - 158
  • [16] NONEQUILIBRIUM ELECTRON-TRANSPORT IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS PROBED BY MAGNETIC-FIELD
    NOTTENBURG, RN
    LEVI, AFJ
    JALALI, B
    SIVCO, D
    HUMPHREY, DA
    CHO, AY
    APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2660 - 2662
  • [17] NUMERICAL-SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH VARIOUS COLLECTOR PARAMETERS
    HORIO, K
    IWATSU, Y
    YANAI, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 617 - 624
  • [18] QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    YANG, YF
    HOUSTON, PA
    HOPKINSON, M
    ELECTRONICS LETTERS, 1992, 28 (02) : 145 - 147
  • [19] CARBON AND INDIUM CODOPING IN GAAS FOR RELIABLE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    NITTONO, T
    WATANABE, N
    ITO, H
    SUGAHARA, H
    NAGATA, K
    NAKAJIMA, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (11): : 6129 - 6135
  • [20] VERTICAL SCALING IN HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM BASE TRANSPORT
    LEVI, AFJ
    JALALI, B
    NOTTENBURG, RN
    CHO, AY
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 460 - 462
12345